Arup Sarkar

Dion-Jacobson (DJ) phase perovskites are increasingly recognized as potential semiconductor materials for electronic applications. However, the restricted coordination between the organic diammonium cations and the inorganic framework inhibits their self-assembly into efficient DJ Sn-based perovskites during solution processing. This study introduces solvent vapor assisted drop casting (SVAD) as a novel processing method to favor the organization into highly crystalline DJ perovskite films. The key aspect of the processing is the extended crystallization time in solvent vapor at elevated temperature. The processing study was conducted on four DJ perovskites that varied in the rigidity and symmetry of their A-cations to demonstrate the universal applicability of SVAD for this category of semiconductors and to establish correlations between structure and properties. The SVAD films exhibit markedly improved crystallinity and morphology compared to spin-coated samples resulting in significantly increased local and device charge carrier mobilities. DJ perovskites with rigid and symmetric A-cations form a planar [SnI6]4– octahedral framework that favors structural order and charge carrier transport. This work paves the way for the solution processing of highly ordered DJ Sn-based perovskites for their implementation in electronic applications.

The nature of electronic excited states has a deep impact on the dynamics of molecular spins but remains poorly understood and characterized. Here we carry out a thorough multiconfigurational investigation for two prototypical molecular qubits based on vanadyl and copper tetraphenyl porphyrins. State-average CASSCF and NEVPT2 calculations have been employed with four different active spaces of growing complexity to account for the d–d, second d-shell, ligand-to-metal charge transfer states, and π–π* excited states, revealing an in-depth picture of low-lying excited states in agreement with experimental observations. The largest active spaces attempted (13,14) for the vanadyl and (17,12) for the copper compounds reveal that the lowest-lying excited states originate from π–π* quartet excitations. These findings shed light on the nature of the excited states of molecular qubits, taking an important step toward elucidating their role in molecular spin dynamics as well as determining novel strategies for the optical read-out of spin states.

Modeling actinides with electronic structure theories is challenging because these systems present a strong ligand field and metal-ligand covalency. We systematically investigate the effectiveness of pair-density functional theory (PDFT) for the calculation of vertical excitation energies in An(III), [AnIIICl6]3-, and [AnVIO2]2+ (An = U, Np, Pu, and Am). We compare the performance of PDFT, hybrid PDFT, and multistate PDFT with traditional active-space methods followed by perturbation theory, like multistate CASPT2, and with experimental data. Overall, multistate PDFT gives quantitative agreement with multistate CASPT2 at a significantly reduced computational cost.

Two possible explanations for the temperature dependence of spin-crossover (SCO) behavior in the dimeric triple-decker Cr(II) complex ([(\eta5-C5Me5)Cr(\mu2:\eta5-P5)Cr(\eta5-C5Me5)]+) have been offered. One invokes variations in antiferromagnetic interactions between the two Cr(II) ions, whereas the other posits the development of a strong ligand-field effect favoring the low-spin ground state. We perform multireference electronic structure calculations based on the multiconfiguration pair-density functional theory to resolve these effects. We find quintet, triplet, and singlet electronic ground states, respectively, for the experimental geometries at high, intermediate, and low temperatures. The ground-state transition from quintet to triplet at an intermediate temperature derives from increased antiferromagnetic interactions between the two Cr(II) ions. By contrast, the ground-state transition from triplet to singlet at low temperature can be attributed to increased ligand-field effects, which dominate with continued variations in antiferromagnetic coupling. This study provides quantitative detail for the degree to which these two effects can act in concert for the observed SCO behavior in this complex and others subject to temperature-dependent variations in geometry.

Two-dimensional (2D) inorganic materials have emerged as exciting platforms for (opto)electronic, thermoelectric, magnetic, and energy storage applications. However, electronic redox tuning of these materials can be difficult. Instead, 2D metal–organic frameworks (MOFs) offer the possibility of electronic tuning through stoichiometric redox changes, with several examples featuring one to two redox events per formula unit. Here, we demonstrate that this principle can be extended over a far greater span with the isolation of four discrete redox states in the 2D MOFs LixFe3(THT)2 (x = 0–3, THT = triphenylenehexathiol). This redox modulation results in 10,000-fold greater conductivity, p- to n-type carrier switching, and modulation of antiferromagnetic coupling. Physical characterization suggests that changes in carrier density drive these trends with relatively constant charge transport activation energies and mobilities. This series illustrates that 2D MOFs are uniquely redox flexible, making them an ideal materials platform for tunable and switchable applications.

Robust and versatile metal-organic frameworks (MOFs) have emerged as sophisticated scaffolds to meet the critical needs of the nuclear community, but their performance depends on their underexplored structural integrities in high-radiation fields. The contributions of selected metal nodes in the radiation stability of MOFs within the isostructural M-UiO-66 series (where M = Zr, Ce, Hf, Th, and Pu; Zr-UiO-66 experiments were executed in a previous work) have been determined. Ce-, Hf-, and Th-UiO-66 MOF samples were irradiated via gamma and He-ion methodologies to obtain doses up to 3 MGy and 85 MGy, respectively, the latter strikingly higher than that obtained in most other studies. Appreciable self-irradiation constituted the total absorbed doses, up to 31 MGy of the gamma-irradiated Pu-UiO-66 samples. Structural degradation was ascertained by powder X-ray diffraction, X-ray total scattering, vibrational spectroscopy, and, where possible, N2 physisorption isotherms. Diffuse reflectance infrared Fourier transform spectroscopy provided atomic-level mechanistic insights to reveal that the node-linker connection was most susceptible to radiation damage. Density functional theory calculations were performed on cluster models to evaluate the binding energy of the linkers to each metal node. While the isostructures disclosed the same breakdown signatures, distinct radiation sensitivity as a function of metal selection was evident and followed the trend Hf-UiO-66 ∼Zr-UiO-66 > Th-UiO-66 > Pu-UiO-66 > Ce-UiO-66. We anticipate that these endeavors will contribute to the rational design of radiation-resistant materials for targeted applications.

Since the last decade, the focus in the area of single-molecule magnets (SMMs) has been shifting constructively towards the development of single-ion magnets (SIMs) based on transition metals and lanthanides. Although ground-breaking results have been witnessed for DyIII-based SIMs, significant results have also been obtained for some mononuclear transition metal SIMs. Among others, studies based on CoII ion are very prominent as they often exhibit high magnetic anisotropy or zero-field splitting parameters and offer a large barrier height for magnetisation reversal. Although CoII possibly holds the record for having the largest number of zero-field SIMs known for any transition metal ion, controlling the magnetic anisotropy in these systems are is still a challenge. In addition to the modern spectroscopic techniques, theoretical studies, especially ab initio CASSCF/NEVPT2 approaches, have been used to uncover the electronic structure of various CoII SIMs. In this article, with some selected examples, the aim is to showcase how varying the coordination number from two to eight, and the geometry around the CoII centre alters the magnetic anisotropy. This offers some design principles for the experimentalists to target new generation SIMs based on the CoII ion. Additionally, some important FeII/FeIII and NiII complexes exhibiting large magnetic anisotropy and SIM properties are also discussed.

Single-molecule magnets have potential uses in several nanotechnology applications, including high-density information storage devices, the realisation of which lies in enhancing the barrier height for magnetisation reversal (Ueff). However, Ln(iii) single-ion magnets (SIMs) that have been reported recently reveal that the maximum value ofUeffvalues that can be obtained by modulating the ligand fields has already been achieved. Here, we have explored, using a combination of DFT andab initioCASSCF calculations, a unique way to enhance the magnetisation reversal barrier using an oriented external electric field in three well-known Ln(iii) single-ion magnets: [Dy(Py)5(OtBu)2]+(1), [ErN(SiMe3)23Cl]−(2) and [Dy(CpMe3)Cl] (3). Our study reveals that, for apt molecules, if the appropriate direction and values of the electric fields are chosen, the barrier height can be enhanced by twice that of the limit set by the ligand field. The application of an electric field along the equatorial direction was found to be suitable for oblate shaped Dy(iii) complexes and an electric field along the axial direction was found to enhance the barrier height for a prolate Er(iii) complex. For complexes2and3, the external electric field was able to magnify the barrier height to 2-3 times that of the original complexes. However, a moderate enhancement was noticed after application of the external electric field in the case of complex1. This novel non-chemical fine-tuning approach to modulate magnetic anisotropy is expected to yield a new generation of SIMs.

Mononuclear four coordinate CoII complexes have drawn a great deal of attention as they often exhibit excellent single-ion magnet (SIM) properties. Among the reported complexes, the axial zero-field splitting parameter (D) was found to vary drastically both in terms of the sign as well as strength. There are various proposals in this respect such as structural distortions, heavier atom substitution, metal-ligand covalency, tuning secondary coordination sphere, etc. that are expected to control the D values. To assess the importance of structural distortions vs. heavier atom substitution effect, here we have undertaken detailed theoretical studies based on the ab initio CASSCF/NEVPT2 method to estimate zero-field splitting parameters for twelve complexes reported in the literature. Our test set includes the CoIIX4 (where X=O, S, Se) core structure where the D value was found to vary from +19 to −118 cm−1. Based on the structural variation, we have classified the complexes into three types (I–III) where type I complexes were found to exhibit the largest negative D value as desired for SIMs. The other two types (II and III) of complexes have been found to be inferior with respect to type I. The secondary coordination sphere was also found to influence D, as substitution on the secondary coordination sphere atom was found to significantly alter the magnitude of D values. Particularly, two structural parameters, namely, the dihedral angle between the two ligand planes and the ∠X-Co-X polar angle were found to heavily influence the sign and strength of D values. Our analysis clearly reveals that these structural factors are much more important than the heavier atom substitution, or metal-ligand covalency. A large variation in the D and E/D values among these complexes despite possessing a very close structural similarity offers an exquisite playground for a chemist to design and develop new-generation CoII-based SIMs.

Understanding and controlling magnetic anisotropy at the level of a single metal ion is vital if the miniaturisation of data storage is to continue to evolve into transformative technologies. Magnetic anisotropy is essential for a molecule-based magnetic memory as it pins the magnetic moment of a metal ion along the easy axis. Devices will require deposition of magnetic molecules on surfaces, where changes in molecular structure can significantly alter magnetic properties. Furthermore, if we are to use coordination complexes with high magnetic anisotropy as building blocks for larger systems we need to know how magnetic anisotropy is affected by structural distortions. Here we study a trigonal bipyramidal nickel(ii) complex where a giant magnetic anisotropy of several hundred wavenumbers can be engineered. By using high pressure, we show how the magnetic anisotropy is strongly influenced by small structural distortions. Using a combination of high pressure X-ray diffraction, ab initio methods and high pressure magnetic measurements, we find that hydrostatic pressure lowers both the trigonal symmetry and axial anisotropy, while increasing the rhombic anisotropy. The ligand-metal-ligand angles in the equatorial plane are found to play a crucial role in tuning the energy separation between the dx2-y2 and dxy orbitals, which is the determining factor that controls the magnitude of the axial anisotropy. These results demonstrate that the combination of high pressure techniques with ab initio studies is a powerful tool that gives a unique insight into the design of systems that show giant magnetic anisotropy.